&#; : : :():[email protected] ,IBM T.J Watson ,。

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Electrical properties of zinc-oxide-based thin-film …

 &#; Electrical properties of zinc-oxide-based thin-film transistors using strontium-oxide-doped semiconductors Wu Shao-Hang()a)b) ... This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby ...

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Improvement in the electrical performance and bias …

 &#; Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor Yu-Rong Liu()1,2,†, Gao-Wei Zhao()1, Pai-To Lai()3, and Ruo-He Yao()1,2

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Effect of surface NHanneal on the physical and electrical ...

 &#; Effect of surface NHanneal on the physical and electrical properties of HfOfilms on Ge substrate Nan Wu, Qingchun Zhang, Chunxiang Zhu, Chia Chin Yeo, S. J. Whang, D. S. H. Chan, M. F. Li, Byung Jin Cho , Albert Chin, Dim-Lee Kwong, A. Y ...

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-PSEG

 &#; []Yu Zhang, Jun Xuand You-Nian Wang.Facing-target mid-frequency magnetron reactive sputtered hafnium oxide film: Morphology and electrical properties.Journal of the Korean Physical Society () []De-Qi Wen, Wei Liu, Fei Gao, M A Liebermanand

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IET Digital Library: Effective improvement of high-k Hf ...

The electrical properties of polysilicon gate MOS capacitors with hafnium silicate (HfSiO) dielectric, with and without NHnitridation, were investigated. The results show that with NHnitridation prior to deposition of HfSiO can effectively tune the flatband voltage close to that of conventional oxide and significantly improve the leakage properties over SiO(three orders reduction).

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(PDF) Study of electrical and microstructure properties …

Study of electrical and microstructure properties of high dielectric hafnium oxide thin film for MOS devices ... and thermal annealing introducing substrate bias during film deposition further on the microstructure and electrical properties of sputtered reduces the leakage current. ... The The improvement in the film properties is attributed to ...

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High dielectric constant oxides

 &#; or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was known about such oxides, and it was soon found that in many respects they have inferior electronic properties to SiO2,suchasa tendency to crystallise and a high concentration of electronic defects. Intensive research is …

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Study of hafnium oxide deposited using Dense …

The electrical properties of HfOgate dielectric as a MOS structure deposited using Dense Plasma Focus (DPF) device under different ambient gases were investigated. DPF is unique machine used for the first time to fabricate a MOS device as it can be used to deposit dielectric film in one shot and can also be used to change the properties of the thin film surface.

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Structural and Electrical Characteristics of Amorphous ...

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES | Structural and Electrical Characteristics of Amorphous ErAlO Gate Dielectric Films ZHU Yan-Yan,2, FANG Ze-Bo**, TAN Yong-Sheng...

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Improvement of Hafnium Oxide/Silicon Oxide Gate …

Abstract In this study, an improvement of device performance with high-pressure heavy water (DO) vapor annealing in a hafnium oxide/silicon oxide gate dielectric stack is reported in comparison with dry and water vapor annealing. The injected heavy water vapors reduced the interface state density and bulk oxide traps in hafnium oxide without increasing the equivalent oxide thickness.

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- improvement in electrical properties of hafnium and

 &#; Improvement of the field emission of carbon nanotubes by hafnium coating and annealing, Nanotechnology:()...[6]Jihua Zhang, Xi Wang, Wenwei Yang, Weidong Yu, Tao Feng, Qiong Li, Xianghuai Liu, Chuanren Yang.

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Structural and Electrical Properties of Barium Strontium ...

Abstract Ferroelectrics and colossal magnetoresistance heterostructure Bax Sr x TiO(BST)/Lax Sr x MnO(LSMO) have been fabricated on a LaAlOsubstrate by the pulse laser deposition method. The dielectric measurements show that at room ...

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Low temperature processed hafnium oxide: Structural …

Request PDF on ResearchGate | Low temperature processed hafnium oxide: Structural and electrical properties | In this work hafniurn oxide (HfO2) was deposited by r.f. magnetron sputtering at room ...

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PROCESSING AND PROPERTIES OF BORON CARBIDE …

 &#; Processing and properties of boron carbide with hafnium diboride addition Ceramics – Silik&#;ty(4)()(Pulverisette, Fritsch, Germany) forh. The homoge-nously mixed BC-HfBcomposite powder was loaded into themm dia. graphite die and further the graphite die assembly was kept inside the hot-pressing chamber.

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Hafnium dioxide

 &#; Hafnium(IV) oxide is the inorganic compound with the formula Hf O.Also known as hafnia, this colourless solid is one of the most common and stable compounds of hafnium.It is an electrical insulator with a band gap of.3~5.eV. Hafnium dioxide is an intermediate in some processes that give hafnium …

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 &#; :::,,,::[email protected]: ,IBM T.J ...

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Improvement in electrical characteristics of HfOgate ...

We report the structural and electrical characteristics of hafnium oxide ...plasma under a high RF power at a low temperature is a promising way to improve in electrical properties of high-K gate dielectrics. ... Improvement in electrical characteristics of HfO…

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 &#; Electrical Properties of Si Nanocrystals embedded in Amorphous SiOFilms, in Nanostructured Thin Films and Coatings: Functional Properties, CRC Handbook of Nanostructured Thin Films and Coatings Edited by Sam Zhang, Published by CRC Press.

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Improvement in electrical properties and thermal …

Improvement in electrical properties and thermal stability of low-temperature-processed Hf–Al–O gate dielectrics Article in Applied Physics Letters():&#; MaywithReads

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HAFNIUM-DOPED TANTALUM OXIDE HIGH-K GATE …

 &#; A novel high-k gate dielectric material, i.e., hafnium-doped tantalum oxide (Hf-doped TaOx), has been studied for the application of the future generation metal-oxide-semiconductor field effect transistor (MOSFET). The film’s electrical, chemical, and structural properties were investigated experimentally. The incorporation of Hf into TaOx

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Improvement in electrical properties of hafnium and ...

Informaci&#;n del art&#;culo Improvement in electrical properties of hafnium and zirconium silicates by postnitriding

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Improvement in electrical properties of hafnium and ...

Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are postannealed in nitrogen monoxide (NO), the leakage current becomes lower by more than one order of magnitude as compared with that of the as-deposited films.

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Improving electrical conductivity and wear resistance …

In addition, the lowest wear rate of films is.2&#;−mm/N m, which is only% and% of that of hafnium nitride and tantalum nitride films, respectively. These results indicate that alloying with another transition metal is an effective method to improve electrical conductivity and …

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Study of electrical properties of hafnium ...

Abstract. Metal–insulator–metal (MIM) capacitors having hafnium oxide (HfO) high-κ dielectric thin film were fabricated and subsequently studied for their electrical and micro-structural properties.The MIM capacitors were found to possess low leakage current density of about.&#;−A/cmat −V, high capacitance density of about.fF/μmatV,MHz and improved ...

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Optical reflectivity and hardness improvement of hafnium ...

 &#; Optical reflectivity and hardness improvement of hafnium nitride films via tantalum alloying Zhiqing Gu,Haihua Huang,Sam Zhang,Xiaoyi Wang,Jing Gao,Lei Zhao,Weitao Zheng,1,4,a) and Chaoquan Hu1,a)School of Materials Science and Engineering, State Key Laboratory of Superhard Materials, and Key Laboratory of Automobile Materials of MOE, Jilin University, Changc, …

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 &#;  Advances in Applied Ceramics、Journal of the Asian Ceramic Societies、Journal of Advanced Ceramics、Journal of Ceramic Society of Japan、China's Refractories , ...

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Optical reflectivity and hardness improvement of …

Optical reflectivity and hardness improvement of hafnium nitride films via tantalum alloying Article in Applied Physics Letters():&#; DecemberwithReads How we measure 'reads'

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Optical reflectivity and hardness improvement of …

Optical reflectivity and hardness improvement of hafnium nitride films via tantalum alloying Article in Applied Physics Letters():&#; DecemberwithReads How we measure 'reads'

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Study of electrical properties of hafnium ...

Abstract. Metal–insulator–metal (MIM) capacitors having hafnium oxide (HfO) high-κ dielectric thin film were fabricated and subsequently studied for their electrical and micro-structural properties.The MIM capacitors were found to possess low leakage current density of about.&#;−A/cmat −V, high capacitance density of about.fF/μmatV,MHz and improved ...

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